vishay sfh640 document number 83682 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 1 i179004 i179004 1 2 3 6 5 4 b c e a c nc optocoupler, phototransistor output, with base connection, 300 v bv ceo features ? good ctr linearity with forward current low ctr degradation very high collector-emi tter breakdown voltage, bv cer = 300 v isolation test voltage: 5300 v rms low coupling capacitance high common mode transient immunity phototransistor optocoupler 6 pin dip package with base connection lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 bsi iec60950 iec60065 description the sfh 640 is an optocoupler with very high bv cer , a minimum of 300 v. it is intended for telecommunica- tions applications or any dc application requiring a high blocking voltage. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks sfh640-1 ctr 40 - 80 %, dip-6 sfh640-2 ctr 63 - 125 %, dip-6 sfh640-3 ctr 100 - 200 %, dip-6 sfh640-2x007 ctr 63 - 125 %, smd-6 (option 7) SFH640-3X007 ctr 100 - 200 %, smd-6 (option 7) sfh640-3x009 ctr 100 - 200 %, smd-6 (option 9) parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t p 10 si fsm 2.5 a total power dissipation p diss 100 mw
www.vishay.com 2 document number 83682 rev. 1.3, 20-apr-04 vishay sfh640 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter voltage v ce 300 v collector-base voltage v cbo 300 v emitter-base voltage v ebo 7.0 v collector current i c 50 ma surge collector current t p 1.0 ms i fsm 100 ma total power dissipation p diss 300 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector, refer to climate din 40046 part 2, nov. 74) v iso 5300/7500 v rms /v pk isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? insulation thickness between emitter and detector 0.4 mm creepage 7.0 mm clearance 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 175 storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v v 1.1 1.5 v reverse voltage i r = 10 av r 6.0 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance r thja 750 k/w parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i ce = 1.0 ma, r be = 1.0 m ? bv cer 300 v voltage emitter-base i eb = 10 abv beo 7.0 v collector-emitter capacitance v ce = 10 v, f = 1.0 mhz c ce 7.0 pf
vishay sfh640 document number 83682 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio collector - base capacitance v cb = 10 v, f = 1.0 mhz c cb 8.0 pf emitter - base capacitance v eb = 5.0 v, f = 1.0 mhz c eb 38 pf thermal resistance r thja 250 k/w parameter test condition part symbol min ty p. max unit coupling capacitance c c 0.6 pf saturation voltage, collector- emitter i f = 10 ma, i c = 2.0 ma sfh640-1 v cesat 0.25 0.4 v i f = 10 ma, i c = 3.2 ma sfh640-2 v cesat 0.25 0.4 v i f = 10 ma, i c = 5.0 ma sfh640-3 v cesat 0.25 0.4 v collector-emitter leakage current v ce = 200 v, r be = 1.0 m ? i cer 1.0 100 na parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma, v ce = 10 v sfh640-1 i c /i f 40 80 % i f = 1.0 ma, v ce = 10 v sfh640-1 i c /i f 13 30 % i f = 10 ma, v ce = 10 v sfh640-2 i c /i f 63 125 % i f = 1.0 ma, v ce = 10 v sfh640-2 i c /i f 22 45 % i f = 10 ma, v ce = 10 v sfh640-3 i c /i f 100 200 % i f = 1.0 ma, v ce = 10 v sfh640-3 i c /i f 34 70 % parameter test condition symbol min ty p. max unit
www.vishay.com 4 document number 83682 rev. 1.3, 20-apr-04 vishay sfh640 vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time i c = 2.0 ma, r l = 100 ? , v cc = 10 v t on 5.0 s rise time i c = 2.0 ma, r l = 100 ? , v cc = 10 v t r 2.5 s turn-off time i c = 2.0 ma, r l = 100 ? , v cc = 10 v t off 6.0 s fall time i c = 2.0 ma, r l = 100 ? , v cc = 10 v t f 5.5 s figure 1. switching times me asurement-test circuit and waveform figure 2. switching times me asurement-test circuit and waveform isfh640_01a i f r l i c v cc 47 ? isfh640_01b 10% 90% input pulse output pulse t r t on t f t off fiure 3.currenttransferratio(typ.) fiure 4.diodeforardvoltae(typ.) isfh640_02 v ce =10v, normalized to i f =10ma, nctr = f (i f ) isfh640_03 v f =f(i f ,t a )
vishay sfh640 document number 83682 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 5 figure 5. output characteristics (typ.) figure 6. output characteristics (typ.) figure 7. transistor capacitances (typ.) isfh640_04 i ce =f (v ce ,i b ) isfh640_05 i ce =f(v ce ,i f ) isfh640_06 f=1.0 mhz, c ce =f(v ce ) c cb =f (v cb ), c eb =f (v eb ) fiure 8.colletoremitterleaaecurrent(typ.) fiure 9.permissiblelossdiode fiure 10.permissiblepoerdissipation isfh640_07 i f =0,r be = 1.0 mw, i cer =f(v ce ) isfh640_08 i f =f(t a ) isfh640_09 p iot =f(t a )
www.vishay.com 6 document number 83682 rev. 1.3, 20-apr-04 vishay sfh640 vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
vishay sfh640 document number 83682 rev. 1.3, 20-apr-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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